Growing Waves in Semiconductors with Two Energy Minima of the GaAs Type

Abstract

In two-valley semiconductors of the GaAs type, under the influence of external electric E0 and magnetic fields H0 at certain orientations and , a current oscillation with a specific frequency and growth rate was obtained. The orientation of the electric E0 and magnetic fields H0 plays a significant role in the excitation of growing waves in semiconductors of the GaAs type. The frequencies and growth increments are determined when exciting current oscillations in a circuit. The dimensions of the crystal are determined by Lz >> Lx, Ly, Lx = Ly. If the dimensions of the sample differ from the condition Lz >> Lx, Ly, Lx = Ly, the growing waves can fade or grow. And in this case, the frequencies of the oscillation growth and the value of the electric E0 and magnetic H0 fields will be different. The values of the magnetic field in the valley “a” are strong, i.e. μaH0 >> c, and in the valley “b” are weak μbH0 >> c. If the magnetic field values in the valleys “a” and “b” are strong, then electromagnetic waves with other frequencies will also be excited. The theory for other values of the magnetic, electric field and, of course, for other values of the crystal dimensions will show other values for the frequency and growth increment. When preparing semiconductor devices (generators, amplifiers, etc.), the dimensions of the sample play a significant role. In this work, analytical expressions for the electric and magnetic fields for certain sample sizes Lx, Ly, Lz were obtained.